Optical and photoelectrical investigations of Ge20Se69Bi11 thin films

M. Kepinska; M. Nowak; S. Okuniewicz; B. Solecka

Optical and photoelectrical investigations of Ge₂₀Se₆₉Bi₁₁ thin films

M. Kepinska
, M. Nowak
, S. Okuniewicz
, B. Solecka

Silesian University of Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Thin films of amorphous Ge₂₀Se₆₉Bi₁₁ were investigated using optical reflectance and transmittance as well as photoconductivity. The determined spectral dependencies of real part of refractive index and absorption coefficient of radiation are presented. The optical energy gap and the Urbach energy have been obtained from the absorption data. The high-frequency dependence of photoconductivity on chopping frequency of illumination intensity allowed to determine the majority carrier lifetime. Using its value as well as the measured optical parameters and the experimental sublinear dependence of photoconductivity on illumination intensity the carrier mobility was evaluated.

Original language	English
Pages (from-to)	417-419
Number of pages	3
Journal	Electron Technology (Warsaw)
Volume	31
Issue number	3-4
Publication status	Published - 1998
Event	Proceedings of the 1997 5th Seminar on Surface and Thin Film Structures - Ustron, Pol Duration: 23 Sept 1997 → 26 Sept 1997

ASJC Scopus subject areas

General Engineering

Cite this

@article{90e67d85edd844d9b8e44826a558b059,

title = "Optical and photoelectrical investigations of Ge20Se69Bi11 thin films",

abstract = "Thin films of amorphous Ge20Se69Bi11 were investigated using optical reflectance and transmittance as well as photoconductivity. The determined spectral dependencies of real part of refractive index and absorption coefficient of radiation are presented. The optical energy gap and the Urbach energy have been obtained from the absorption data. The high-frequency dependence of photoconductivity on chopping frequency of illumination intensity allowed to determine the majority carrier lifetime. Using its value as well as the measured optical parameters and the experimental sublinear dependence of photoconductivity on illumination intensity the carrier mobility was evaluated.",

author = "M. Kepinska and M. Nowak and S. Okuniewicz and B. Solecka",

year = "1998",

language = "English",

volume = "31",

pages = "417--419",

journal = "Electron Technology (Warsaw)",

issn = "0070-9816",

publisher = "Institute of Electron Technology",

number = "3-4",

note = "Proceedings of the 1997 5th Seminar on Surface and Thin Film Structures ; Conference date: 23-09-1997 Through 26-09-1997",

}

TY - JOUR

T1 - Optical and photoelectrical investigations of Ge20Se69Bi11 thin films

AU - Kepinska, M.

AU - Nowak, M.

AU - Okuniewicz, S.

AU - Solecka, B.

PY - 1998

Y1 - 1998

N2 - Thin films of amorphous Ge20Se69Bi11 were investigated using optical reflectance and transmittance as well as photoconductivity. The determined spectral dependencies of real part of refractive index and absorption coefficient of radiation are presented. The optical energy gap and the Urbach energy have been obtained from the absorption data. The high-frequency dependence of photoconductivity on chopping frequency of illumination intensity allowed to determine the majority carrier lifetime. Using its value as well as the measured optical parameters and the experimental sublinear dependence of photoconductivity on illumination intensity the carrier mobility was evaluated.

AB - Thin films of amorphous Ge20Se69Bi11 were investigated using optical reflectance and transmittance as well as photoconductivity. The determined spectral dependencies of real part of refractive index and absorption coefficient of radiation are presented. The optical energy gap and the Urbach energy have been obtained from the absorption data. The high-frequency dependence of photoconductivity on chopping frequency of illumination intensity allowed to determine the majority carrier lifetime. Using its value as well as the measured optical parameters and the experimental sublinear dependence of photoconductivity on illumination intensity the carrier mobility was evaluated.

UR - https://www.scopus.com/pages/publications/0032301173

M3 - Conference article

AN - SCOPUS:0032301173

SN - 0070-9816

VL - 31

SP - 417

EP - 419

JO - Electron Technology (Warsaw)

JF - Electron Technology (Warsaw)

IS - 3-4

T2 - Proceedings of the 1997 5th Seminar on Surface and Thin Film Structures

Y2 - 23 September 1997 through 26 September 1997

ER -

Optical and photoelectrical investigations of Ge₂₀Se₆₉Bi₁₁ thin films

Abstract

ASJC Scopus subject areas

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