On the correlation between morphology and gas sensing properties of RGTO SnO2 thin films

J. Szuber; J. Uljanow; T. Karczewska-Buczek; W. Jakubik; K. Waczyński; M. Kwoka; S. Kończak

doi:10.1016/j.tsf.2005.04.011

On the correlation between morphology and gas sensing properties of RGTO SnO₂ thin films

J. Szuber
, J. Uljanow
, T. Karczewska-Buczek
, W. Jakubik
, K. Waczyński
, M. Kwoka
, S. Kończak

Silesian University of Technology

Research output: Contribution to journal › Conference article › peer-review

18 Citations (Scopus)

Abstract

In this paper, we present the results of studies on optimalisation of morphology of the SnO₂ thin films grown by RGTO technique for application as gas sensor structures. The Sn thin films were grown on Si(111) wafer and Al₂O₃ ceramic plate heated in the range 235-295 °C and subsequently oxidized in dry oxygen atmosphere at high temperature, up to 700 °C. Our studies confirmed that the highest surface coverage of Sn droplets can be reached for the substrate temperature of about 265 °C leading to the highest surface-to-volume ratio of SnO₂ thin films. It was in a good correlation to the optimal gas sensor response and sensor sensitivity of RGTO SnO₂ thin films to nitrogen dioxide NO ₂.

Original language	English
Pages (from-to)	54-58
Number of pages	5
Journal	Thin Solid Films
Volume	490
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2005.04.011
Publication status	Published - 21 Oct 2005
Event	Proceedings of the 4th International Workshop on Semiconductor Gas Sensors (SGS 2004) - Duration: 19 Sept 2004 → 23 Sept 2004

Keywords

Deposition
Gas response
Oxidation
Thin films
Tin dioxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2005.04.011

Cite this

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title = "On the correlation between morphology and gas sensing properties of RGTO SnO2 thin films",

abstract = "In this paper, we present the results of studies on optimalisation of morphology of the SnO2 thin films grown by RGTO technique for application as gas sensor structures. The Sn thin films were grown on Si(111) wafer and Al2O3 ceramic plate heated in the range 235-295 °C and subsequently oxidized in dry oxygen atmosphere at high temperature, up to 700 °C. Our studies confirmed that the highest surface coverage of Sn droplets can be reached for the substrate temperature of about 265 °C leading to the highest surface-to-volume ratio of SnO2 thin films. It was in a good correlation to the optimal gas sensor response and sensor sensitivity of RGTO SnO2 thin films to nitrogen dioxide NO 2.",

keywords = "Deposition, Gas response, Oxidation, Thin films, Tin dioxide",

author = "J. Szuber and J. Uljanow and T. Karczewska-Buczek and W. Jakubik and K. Waczy{\'n}ski and M. Kwoka and S. Ko{\'n}czak",

year = "2005",

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doi = "10.1016/j.tsf.2005.04.011",

language = "English",

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journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the 4th International Workshop on Semiconductor Gas Sensors (SGS 2004) ; Conference date: 19-09-2004 Through 23-09-2004",

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TY - JOUR

T1 - On the correlation between morphology and gas sensing properties of RGTO SnO2 thin films

AU - Szuber, J.

AU - Uljanow, J.

AU - Karczewska-Buczek, T.

AU - Jakubik, W.

AU - Waczyński, K.

AU - Kwoka, M.

AU - Kończak, S.

PY - 2005/10/21

Y1 - 2005/10/21

N2 - In this paper, we present the results of studies on optimalisation of morphology of the SnO2 thin films grown by RGTO technique for application as gas sensor structures. The Sn thin films were grown on Si(111) wafer and Al2O3 ceramic plate heated in the range 235-295 °C and subsequently oxidized in dry oxygen atmosphere at high temperature, up to 700 °C. Our studies confirmed that the highest surface coverage of Sn droplets can be reached for the substrate temperature of about 265 °C leading to the highest surface-to-volume ratio of SnO2 thin films. It was in a good correlation to the optimal gas sensor response and sensor sensitivity of RGTO SnO2 thin films to nitrogen dioxide NO 2.

AB - In this paper, we present the results of studies on optimalisation of morphology of the SnO2 thin films grown by RGTO technique for application as gas sensor structures. The Sn thin films were grown on Si(111) wafer and Al2O3 ceramic plate heated in the range 235-295 °C and subsequently oxidized in dry oxygen atmosphere at high temperature, up to 700 °C. Our studies confirmed that the highest surface coverage of Sn droplets can be reached for the substrate temperature of about 265 °C leading to the highest surface-to-volume ratio of SnO2 thin films. It was in a good correlation to the optimal gas sensor response and sensor sensitivity of RGTO SnO2 thin films to nitrogen dioxide NO 2.

KW - Deposition

KW - Gas response

KW - Oxidation

KW - Thin films

KW - Tin dioxide

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DO - 10.1016/j.tsf.2005.04.011

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AN - SCOPUS:24044540383

SN - 0040-6090

VL - 490

SP - 54

EP - 58

JO - Thin Solid Films

JF - Thin Solid Films

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T2 - Proceedings of the 4th International Workshop on Semiconductor Gas Sensors (SGS 2004)

Y2 - 19 September 2004 through 23 September 2004

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