New procedure for determination of the interface Fermi level position for atomic hydrogen cleaned GaAs(100) surface using photoemission

High-resolution photoemission yield spectroscopy (PYS) technique was used for studies of the electronic properties of the space-charge layer of the GaAs(100) surface cleaned by the surface chemical reactions using atomic hydrogen, with special emphasis to the energetic parameters including the interface Fermi level position in the band gap. The variation of the space-charge layer parameters for the GaAs(100) surface prepared with standard wet chemical preprocessing and after cleaned by atomic hydrogen were observed together with the evolution of the effective density of the filled electronic states localized in the band gap below the Fermi level E_F. The obtained results were discussed and compared to those obtained by other groups using the classical modes of photoemission spectroscopy.