Modification of the optical and electronics parameters a-Si:H as a result of annealed with a CO2 laser radiation

A. Grabowski; M. Nowak

doi:10.1117/12.405973

Modification of the optical and electronics parameters a-Si:H as a result of annealed with a CO₂ laser radiation

A. Grabowski
, M. Nowak

Division of Solid State Physics (RIF/RIF1)

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Thin film of hydrogenated amorphous silicon (a-Si:H) were annealed using CO₂ laser radiation (λ=10, 6 μm). The influence of this laser treatment on spectral dependencies of real part of refractive index and absorption coefficient of light in a-Si:H are presented. The values of energy gap have decreased while the Urbach energy increased after CO₂ laser annealing of a-Si:H. The conductivity and photoconductivity of the annealed material have decreased. The power coefficient of the light intensity dependence of photoconductivity has also changed. The influence of CO₂ laser irradiation on the energetic distribution of electron states of a-Si:H is reported.

Original language	English
Pages (from-to)	174-179
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4238
DOIs	https://doi.org/10.1117/12.405973
Publication status	Published - 2000
Event	Laser Technology VI: Applications - Szczecin-Swinoujscie, Pol Duration: 27 Sept 2000 → 1 Oct 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Modification of the optical and electronics parameters a-Si:H as a result of annealed with a CO2 laser radiation",

abstract = "Thin film of hydrogenated amorphous silicon (a-Si:H) were annealed using CO2 laser radiation (λ=10, 6 μm). The influence of this laser treatment on spectral dependencies of real part of refractive index and absorption coefficient of light in a-Si:H are presented. The values of energy gap have decreased while the Urbach energy increased after CO2 laser annealing of a-Si:H. The conductivity and photoconductivity of the annealed material have decreased. The power coefficient of the light intensity dependence of photoconductivity has also changed. The influence of CO2 laser irradiation on the energetic distribution of electron states of a-Si:H is reported.",

author = "A. Grabowski and M. Nowak",

year = "2000",

doi = "10.1117/12.405973",

language = "English",

volume = "4238",

pages = "174--179",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Laser Technology VI: Applications ; Conference date: 27-09-2000 Through 01-10-2000",

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TY - JOUR

T1 - Modification of the optical and electronics parameters a-Si:H as a result of annealed with a CO2 laser radiation

AU - Grabowski, A.

AU - Nowak, M.

PY - 2000

Y1 - 2000

N2 - Thin film of hydrogenated amorphous silicon (a-Si:H) were annealed using CO2 laser radiation (λ=10, 6 μm). The influence of this laser treatment on spectral dependencies of real part of refractive index and absorption coefficient of light in a-Si:H are presented. The values of energy gap have decreased while the Urbach energy increased after CO2 laser annealing of a-Si:H. The conductivity and photoconductivity of the annealed material have decreased. The power coefficient of the light intensity dependence of photoconductivity has also changed. The influence of CO2 laser irradiation on the energetic distribution of electron states of a-Si:H is reported.

AB - Thin film of hydrogenated amorphous silicon (a-Si:H) were annealed using CO2 laser radiation (λ=10, 6 μm). The influence of this laser treatment on spectral dependencies of real part of refractive index and absorption coefficient of light in a-Si:H are presented. The values of energy gap have decreased while the Urbach energy increased after CO2 laser annealing of a-Si:H. The conductivity and photoconductivity of the annealed material have decreased. The power coefficient of the light intensity dependence of photoconductivity has also changed. The influence of CO2 laser irradiation on the energetic distribution of electron states of a-Si:H is reported.

UR - https://www.scopus.com/pages/publications/0034461906

U2 - 10.1117/12.405973

DO - 10.1117/12.405973

M3 - Conference article

AN - SCOPUS:0034461906

SN - 0277-786X

VL - 4238

SP - 174

EP - 179

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Laser Technology VI: Applications

Y2 - 27 September 2000 through 1 October 2000

ER -

Modification of the optical and electronics parameters a-Si:H as a result of annealed with a CO₂ laser radiation

Abstract

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