Mathematical model of the process of creating film resistors with a Ni-P resistive layer

Piotr Kowalik; Zbigniew Pruszowski

doi:10.23919/EMPC.2017.8346911

Mathematical model of the process of creating film resistors with a Ni-P resistive layer

Piotr Kowalik
, Zbigniew Pruszowski

Department of Electronics; Electrical Engineering and Microelectronics (RAU/RAU11)

Silesian University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The authors created a convenient and easy to use tool for calculating basic Ni-P resistive layer parameters, namely surface resistance and TCR of test resistor, based on chemical metallization parameters. The program allows calculating basic values characterizing the technological process of Ni-P resistive layer formation by means of chemical metallization. The values are temperature and acidity of the metallization bath. The values are calculated for a given level of surface resistance of Ni-P resistive layer and defined required range of changes of TCR of test resistor with the Ni-P layer. The calculations are possible for surface resistance values in the range of 0.5 Ω/□ □ 2.5 Ω/□. As the program was developed on the basis of experimental data, parameters of resistors produced using the mathematical model are in practice coherent with expected results. The best coherence is achieved for simultaneous simulation of surface resistance and TCR. Very good results are also obtained if one wants to use a metallization bath of a temperature from the (333÷353) K range in order to obtain the required resistor parameters.

Original language	English
Title of host publication	EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition
Editors	Andrzej Dziedzic, Piotr Jasinski
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-5
Number of pages	5
ISBN (Electronic)	9780956808646
DOIs	https://doi.org/10.23919/EMPC.2017.8346911
Publication status	Published - 2 Jul 2017
Event	21st European Microelectronics and Packaging Conference and Exhibition, EMPC 2017 - Warsaw, Poland Duration: 10 Sept 2017 → 13 Sept 2017

Publication series

Name	EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition
Volume	2018-January

Conference

Conference	21st European Microelectronics and Packaging Conference and Exhibition, EMPC 2017
Country/Territory	Poland
City	Warsaw
Period	10/09/17 → 13/09/17

Keywords

Ni-P
mathematical model
resistive layers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.23919/EMPC.2017.8346911

Cite this

Kowalik, P., & Pruszowski, Z. (2017). Mathematical model of the process of creating film resistors with a Ni-P resistive layer. In A. Dziedzic, & P. Jasinski (Eds.), EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition (pp. 1-5). (EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition; Vol. 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/EMPC.2017.8346911

Kowalik, Piotr ; Pruszowski, Zbigniew. / Mathematical model of the process of creating film resistors with a Ni-P resistive layer. EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition. editor / Andrzej Dziedzic ; Piotr Jasinski. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-5 (EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition).

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title = "Mathematical model of the process of creating film resistors with a Ni-P resistive layer",

abstract = "The authors created a convenient and easy to use tool for calculating basic Ni-P resistive layer parameters, namely surface resistance and TCR of test resistor, based on chemical metallization parameters. The program allows calculating basic values characterizing the technological process of Ni-P resistive layer formation by means of chemical metallization. The values are temperature and acidity of the metallization bath. The values are calculated for a given level of surface resistance of Ni-P resistive layer and defined required range of changes of TCR of test resistor with the Ni-P layer. The calculations are possible for surface resistance values in the range of 0.5 Ω/□ □ 2.5 Ω/□. As the program was developed on the basis of experimental data, parameters of resistors produced using the mathematical model are in practice coherent with expected results. The best coherence is achieved for simultaneous simulation of surface resistance and TCR. Very good results are also obtained if one wants to use a metallization bath of a temperature from the (333÷353) K range in order to obtain the required resistor parameters.",

keywords = "Ni-P, mathematical model, resistive layers",

author = "Piotr Kowalik and Zbigniew Pruszowski",

note = "Publisher Copyright: {\textcopyright} 2017 IMAPS Europe.; 21st European Microelectronics and Packaging Conference and Exhibition, EMPC 2017 ; Conference date: 10-09-2017 Through 13-09-2017",

year = "2017",

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language = "English",

series = "EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition",

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Kowalik, P & Pruszowski, Z 2017, Mathematical model of the process of creating film resistors with a Ni-P resistive layer. in A Dziedzic & P Jasinski (eds), EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition. EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition, vol. 2018-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-5, 21st European Microelectronics and Packaging Conference and Exhibition, EMPC 2017, Warsaw, Poland, 10/09/17. https://doi.org/10.23919/EMPC.2017.8346911

Mathematical model of the process of creating film resistors with a Ni-P resistive layer. / Kowalik, Piotr; Pruszowski, Zbigniew.
EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition. ed. / Andrzej Dziedzic; Piotr Jasinski. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-5 (EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition; Vol. 2018-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Mathematical model of the process of creating film resistors with a Ni-P resistive layer

AU - Kowalik, Piotr

AU - Pruszowski, Zbigniew

PY - 2017/7/2

Y1 - 2017/7/2

N2 - The authors created a convenient and easy to use tool for calculating basic Ni-P resistive layer parameters, namely surface resistance and TCR of test resistor, based on chemical metallization parameters. The program allows calculating basic values characterizing the technological process of Ni-P resistive layer formation by means of chemical metallization. The values are temperature and acidity of the metallization bath. The values are calculated for a given level of surface resistance of Ni-P resistive layer and defined required range of changes of TCR of test resistor with the Ni-P layer. The calculations are possible for surface resistance values in the range of 0.5 Ω/□ □ 2.5 Ω/□. As the program was developed on the basis of experimental data, parameters of resistors produced using the mathematical model are in practice coherent with expected results. The best coherence is achieved for simultaneous simulation of surface resistance and TCR. Very good results are also obtained if one wants to use a metallization bath of a temperature from the (333÷353) K range in order to obtain the required resistor parameters.

AB - The authors created a convenient and easy to use tool for calculating basic Ni-P resistive layer parameters, namely surface resistance and TCR of test resistor, based on chemical metallization parameters. The program allows calculating basic values characterizing the technological process of Ni-P resistive layer formation by means of chemical metallization. The values are temperature and acidity of the metallization bath. The values are calculated for a given level of surface resistance of Ni-P resistive layer and defined required range of changes of TCR of test resistor with the Ni-P layer. The calculations are possible for surface resistance values in the range of 0.5 Ω/□ □ 2.5 Ω/□. As the program was developed on the basis of experimental data, parameters of resistors produced using the mathematical model are in practice coherent with expected results. The best coherence is achieved for simultaneous simulation of surface resistance and TCR. Very good results are also obtained if one wants to use a metallization bath of a temperature from the (333÷353) K range in order to obtain the required resistor parameters.

KW - Ni-P

KW - mathematical model

KW - resistive layers

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DO - 10.23919/EMPC.2017.8346911

M3 - Conference contribution

AN - SCOPUS:85049749762

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BT - EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition

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A2 - Jasinski, Piotr

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 21st European Microelectronics and Packaging Conference and Exhibition, EMPC 2017

Y2 - 10 September 2017 through 13 September 2017

ER -

Kowalik P, Pruszowski Z. Mathematical model of the process of creating film resistors with a Ni-P resistive layer. In Dziedzic A, Jasinski P, editors, EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-5. (EMPC 2017 - 21st European Microelectronics and Packaging Conference and Exhibition). doi: 10.23919/EMPC.2017.8346911

Mathematical model of the process of creating film resistors with a Ni-P resistive layer

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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