L'oxydation à l'air de réfractaires à base de carbure et de nitrure de silicium

A. Zymla; V. Zymla; T. Pawlik; M. Sopicka-Lizer; J. B. Guillot

L'oxydation à l'air de réfractaires à base de carbure et de nitrure de silicium

Translated title of the contribution: Oxidation in air of nitride bonded silicon carbide ceramic

A. Zymla
, V. Zymla
, T. Pawlik
, M. Sopicka-Lizer
, J. B. Guillot

Department of Material Technologies (RM/RM3)

Ecole Centrale

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The rate of air oxidation towards 1,000°C of the Si₃N ₄-bonded silicon carbide refractory is low. It is found that the porous nitride-bonding phase oxidizes mainly and that the SiC oxidation is negligible. The decrease of specific surface area, due to the growing of a dense silica layer, induces much slower kinetics.

Translated title of the contribution	Oxidation in air of nitride bonded silicon carbide ceramic
Original language	French
Pages (from-to)	427-437+IV-VI
Journal	Revue de Metallurgie. Cahiers D'Informations Techniques
Volume	101
Issue number	5
Publication status	Published - May 2004

ASJC Scopus subject areas

Condensed Matter Physics
Physical and Theoretical Chemistry
Metals and Alloys
Materials Chemistry

Cite this

@article{514012d989524333b5baf04388810475,

title = "L'oxydation {\`a} l'air de r{\'e}fractaires {\`a} base de carbure et de nitrure de silicium",

abstract = "The rate of air oxidation towards 1,000°C of the Si3N 4-bonded silicon carbide refractory is low. It is found that the porous nitride-bonding phase oxidizes mainly and that the SiC oxidation is negligible. The decrease of specific surface area, due to the growing of a dense silica layer, induces much slower kinetics.",

author = "A. Zymla and V. Zymla and T. Pawlik and M. Sopicka-Lizer and Guillot, \{J. B.\}",

year = "2004",

month = may,

language = "francuski",

volume = "101",

pages = "427--437+IV--VI",

journal = "Revue de Metallurgie. Cahiers D'Informations Techniques",

issn = "0035-1563",

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TY - JOUR

T1 - L'oxydation à l'air de réfractaires à base de carbure et de nitrure de silicium

AU - Zymla, A.

AU - Zymla, V.

AU - Pawlik, T.

AU - Sopicka-Lizer, M.

AU - Guillot, J. B.

PY - 2004/5

Y1 - 2004/5

N2 - The rate of air oxidation towards 1,000°C of the Si3N 4-bonded silicon carbide refractory is low. It is found that the porous nitride-bonding phase oxidizes mainly and that the SiC oxidation is negligible. The decrease of specific surface area, due to the growing of a dense silica layer, induces much slower kinetics.

AB - The rate of air oxidation towards 1,000°C of the Si3N 4-bonded silicon carbide refractory is low. It is found that the porous nitride-bonding phase oxidizes mainly and that the SiC oxidation is negligible. The decrease of specific surface area, due to the growing of a dense silica layer, induces much slower kinetics.

UR - https://www.scopus.com/pages/publications/34547646122

M3 - Artykuł

AN - SCOPUS:34547646122

SN - 0035-1563

VL - 101

SP - 427-437+IV-VI

JO - Revue de Metallurgie. Cahiers D'Informations Techniques

JF - Revue de Metallurgie. Cahiers D'Informations Techniques

IS - 5

ER -

L'oxydation à l'air de réfractaires à base de carbure et de nitrure de silicium

Abstract

ASJC Scopus subject areas

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