Influence of the pvd process parameters on zno: Al thin films

Paulina Boryło; Krzysztof Matus; Krzysztof Lukaszkowicz; Marek Szindler; Klaudiusz Gołombek

Influence of the pvd process parameters on zno: Al thin films

Silesian University of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

In recent years a growing interest in searching new material for producing Transparent Conductive Layers (TLC) is observed. ZnO:Al thin films are this type material, interesting due to wide range of potential applications where it can be applied like: transparent electrodes, gas sensors, thin film transistors, sensor devices, electroluminescent diodes and others. The aim of this paper is to discuss influence of the ZnO:Al film deposition parameters of PVD magnetron sputtering method on TCL structure and its chemical composition. It contains description of the ZnO:Al PVD magnetron sputtering deposition method. It discusses results obtained from the analysis of the microstructure of ZnO:Al thin films using a high resolution scanning electron microscope, layers' surface topography determined with atomic force microscope and results of chemical composition analyses.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Applied Engineering Letters
Volume	2
Issue number	1
Publication status	Published - 2017

Keywords

AFM
MZO
PVD
SEM
TCL
ZnO:Al

ASJC Scopus subject areas

General Materials Science
General Engineering
General Energy

Cite this

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title = "Influence of the pvd process parameters on zno: Al thin films",

abstract = "In recent years a growing interest in searching new material for producing Transparent Conductive Layers (TLC) is observed. ZnO:Al thin films are this type material, interesting due to wide range of potential applications where it can be applied like: transparent electrodes, gas sensors, thin film transistors, sensor devices, electroluminescent diodes and others. The aim of this paper is to discuss influence of the ZnO:Al film deposition parameters of PVD magnetron sputtering method on TCL structure and its chemical composition. It contains description of the ZnO:Al PVD magnetron sputtering deposition method. It discusses results obtained from the analysis of the microstructure of ZnO:Al thin films using a high resolution scanning electron microscope, layers' surface topography determined with atomic force microscope and results of chemical composition analyses.",

keywords = "AFM, MZO, PVD, SEM, TCL, ZnO:Al",

author = "Paulina Bory{\l}o and Krzysztof Matus and Krzysztof Lukaszkowicz and Marek Szindler and Klaudiusz Go{\l}ombek",

year = "2017",

language = "English",

volume = "2",

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journal = "Applied Engineering Letters",

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number = "1",

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TY - JOUR

T1 - Influence of the pvd process parameters on zno

T2 - Al thin films

AU - Boryło, Paulina

AU - Matus, Krzysztof

AU - Lukaszkowicz, Krzysztof

AU - Szindler, Marek

AU - Gołombek, Klaudiusz

PY - 2017

Y1 - 2017

N2 - In recent years a growing interest in searching new material for producing Transparent Conductive Layers (TLC) is observed. ZnO:Al thin films are this type material, interesting due to wide range of potential applications where it can be applied like: transparent electrodes, gas sensors, thin film transistors, sensor devices, electroluminescent diodes and others. The aim of this paper is to discuss influence of the ZnO:Al film deposition parameters of PVD magnetron sputtering method on TCL structure and its chemical composition. It contains description of the ZnO:Al PVD magnetron sputtering deposition method. It discusses results obtained from the analysis of the microstructure of ZnO:Al thin films using a high resolution scanning electron microscope, layers' surface topography determined with atomic force microscope and results of chemical composition analyses.

AB - In recent years a growing interest in searching new material for producing Transparent Conductive Layers (TLC) is observed. ZnO:Al thin films are this type material, interesting due to wide range of potential applications where it can be applied like: transparent electrodes, gas sensors, thin film transistors, sensor devices, electroluminescent diodes and others. The aim of this paper is to discuss influence of the ZnO:Al film deposition parameters of PVD magnetron sputtering method on TCL structure and its chemical composition. It contains description of the ZnO:Al PVD magnetron sputtering deposition method. It discusses results obtained from the analysis of the microstructure of ZnO:Al thin films using a high resolution scanning electron microscope, layers' surface topography determined with atomic force microscope and results of chemical composition analyses.

KW - AFM

KW - MZO

KW - PVD

KW - SEM

KW - TCL

KW - ZnO:Al

UR - https://www.scopus.com/pages/publications/85106036782

M3 - Article

AN - SCOPUS:85106036782

SN - 2466-4677

VL - 2

SP - 1

EP - 5

JO - Applied Engineering Letters

JF - Applied Engineering Letters

IS - 1

ER -

Influence of the pvd process parameters on zno: Al thin films

Abstract

Keywords

ASJC Scopus subject areas

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