Abstract
Purpose - The purpose of this paper is to characterize electrical parameters of amorphous Ni-P resistive layers used for fabrication of precise resistors. Design/methodology/approach - Ni-P resistive layers were produced by the chemical process in water solution using Ni2+and H 2PO2- ions. The paper presents the results of the studies concerning the influence of bath acidity and conditions of thermal stabilization on the structure and temperature coefficient of resistance of Ni-P alloy. Findings - The temperature coefficient of resistance of amorphous Ni-P layers was found to depend significantly on the parameters of chemical metallisation process. It was stated that the changes of through-casing resistivity versus the acidity of technological solution have roughly parabolic characteristics. Originality/value - In this paper, it was at first explained how the changes of the structure of Ni-P resistive layers depend on their temperature coefficient of capacitance. Alloys Electrical resistivity Metallizing Resistors Thin film ©
| Original language | English |
|---|---|
| Pages (from-to) | 24-27 |
| Number of pages | 4 |
| Journal | Microelectronics International |
| Volume | 26 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 8 May 2009 |
Keywords
- Alloys
- Electrical resistivity
- Metallizing
- Resistors.
- Thin film
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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