@inproceedings{e241ad669055428591be17289a31e75d,
title = "Influence of nitrogen implantation on electrical properties of Al/SiO2/4H-SiC MOS structure",
abstract = "An influence of nitrogen implantation dose on the properties of MOS structure is analyzed. The properties are investigated using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that the trap density is directly related to implantation damage and conditions.",
keywords = "Ion implantation, Ion implantation damage, Silicon carbide, Thermal oxidation",
author = "K. Krol and M. Sochacki and M. Turek and J. Zuk and Przewlocki, \{H. M.\} and T. Gutt and P. Borowicz and M. Guziewicz and J. Szuber and M. Kwoka and P. Koscielniak and J. Szmidt",
year = "2013",
doi = "10.4028/www.scientific.net/MSF.740-742.733",
language = "English",
isbn = "9783037856246",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd.",
pages = "733--736",
editor = "Lebedev, \{Alexander A.\} and Davydov, \{Sergey Yu.\} and Ivanov, \{Pavel A.\} and Levinshtein, \{Mikhail E.\}",
booktitle = "Silicon Carbide and Related Materials 2012, ECSCRM 2012",
address = "Switzerland",
note = "9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 ; Conference date: 02-09-2012 Through 06-09-2012",
}