Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs:Cr

G. J. Papaioannou; M. Nowak; P. C. Euthymiou

doi:10.1063/1.343199

Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs:Cr

G. J. Papaioannou
, M. Nowak
, P. C. Euthymiou

Division of Solid State Physics (RIF/RIF1)

National and Kapodistrian University of Athens

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Negative photoconductivity (PC) was observed in Si ion-implanted GaAs:Cr below the fundamental band gap. The dependence of this effect on wavelength and intensity of illumination is reported. For photon energies slightly smaller than the optical energy gap the negative PC reverts into positive PC with increasing illumination intensity. Complementary investigations of PC in Si ion-implanted, undoped GaAs also are presented. The physical reasons for the negative PC are discussed.

Original language	English
Pages (from-to)	4864-4868
Number of pages	5
Journal	Journal of Applied Physics
Volume	65
Issue number	12
DOIs	https://doi.org/10.1063/1.343199
Publication status	Published - 1989

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.343199

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title = "Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs:Cr",

abstract = "Negative photoconductivity (PC) was observed in Si ion-implanted GaAs:Cr below the fundamental band gap. The dependence of this effect on wavelength and intensity of illumination is reported. For photon energies slightly smaller than the optical energy gap the negative PC reverts into positive PC with increasing illumination intensity. Complementary investigations of PC in Si ion-implanted, undoped GaAs also are presented. The physical reasons for the negative PC are discussed.",

author = "Papaioannou, \{G. J.\} and M. Nowak and Euthymiou, \{P. C.\}",

year = "1989",

doi = "10.1063/1.343199",

language = "English",

volume = "65",

pages = "4864--4868",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

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T1 - Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs:Cr

AU - Papaioannou, G. J.

AU - Nowak, M.

AU - Euthymiou, P. C.

PY - 1989

Y1 - 1989

N2 - Negative photoconductivity (PC) was observed in Si ion-implanted GaAs:Cr below the fundamental band gap. The dependence of this effect on wavelength and intensity of illumination is reported. For photon energies slightly smaller than the optical energy gap the negative PC reverts into positive PC with increasing illumination intensity. Complementary investigations of PC in Si ion-implanted, undoped GaAs also are presented. The physical reasons for the negative PC are discussed.

AB - Negative photoconductivity (PC) was observed in Si ion-implanted GaAs:Cr below the fundamental band gap. The dependence of this effect on wavelength and intensity of illumination is reported. For photon energies slightly smaller than the optical energy gap the negative PC reverts into positive PC with increasing illumination intensity. Complementary investigations of PC in Si ion-implanted, undoped GaAs also are presented. The physical reasons for the negative PC are discussed.

UR - https://www.scopus.com/pages/publications/12944289404

U2 - 10.1063/1.343199

DO - 10.1063/1.343199

M3 - Article

AN - SCOPUS:12944289404

SN - 0021-8979

VL - 65

SP - 4864

EP - 4868

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs:Cr

Abstract

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