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High‐frequency photomagnetoelectric method for determining semiconductor parameters

  • S. Kończak
  • , K. Kotewicz
  • , M. Nowak
  • Silesian University of Technology

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The high‐frequency method of investigation of PME and PC effects is used for the measurements on silicon samples of different thickness. A method for testing the conformity of thick or thin samples, a theory to work out the experimental results is reported. An application of the acoustooptical modulation of a laser beam to the investigation of PME and PC effects is presented.

Original languageEnglish
Pages (from-to)447-451
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume65
Issue number2
DOIs
Publication statusPublished - 16 Jun 1981

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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