Abstract
This paper presents a systematic approach to design high performance gate drive circuits for high speed switching applications. In the project tested two integrated drivers DEIC420, DEIC515, and additionally two discrete drivers 4xZXGD3003 and 8xEL7457 have been designed. The new MOSFET Drivers have been verified by using the universal laboratory in Department of Power Electronics, Electrical Drives and Robotics Silesian University of Technology.
| Translated title of the contribution | Wysokocze{ogonek}stotliwościowe drajwery tranzystorów MOSFET mocy |
|---|---|
| Original language | English |
| Pages (from-to) | 229-234 |
| Number of pages | 6 |
| Journal | Przeglad Elektrotechniczny |
| Volume | 90 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2014 |
Keywords
- Analysis
- Driver
- MOSFET Transistor
- Power losses
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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