Filamentary Resistive Switching Mechanism in CuO Thin Film-Based Memristor

Understanding the resistive switching (RS) mechanisms in memristive devices is crucial for developing non-volatile memory technologies. Here, we investigate the memristor effect in hydrothermally grown Au-nanoseeded CuO films. Based on I-V measurements, conductive-AFM, S/TEM, and EDS analyses, we examine the changes within the switching layer associated with RS. Our results reveal a filamentary mechanism of RS. Notably, EDS mapping shows directional Au redistribution between the bottom nanoseeds and the top electrode, while Cu and O remain uniformly distributed. These findings support an electrochemical metallization (ECM)-like filamentary mechanism driven by Au species migration. The use of Au-nanoseeds, required by the solution-based growth method, critically affects filament formation and RS behavior. Our results emphasize the importance of microstructure and electrode–oxide interfaces in determining the switching mechanism in oxide-based memristors.