Evaluation of the usefulness of silica glass for the production of MIS structures with a double dielectric layer

S. Los; K. Waczynski

Evaluation of the usefulness of silica glass for the production of MIS structures with a double dielectric layer

S. Los
, K. Waczynski

Department of Electronics; Electrical Engineering and Microelectronics (RAU/RAU11)

Silesian University of Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

The paper presents the research into a technique of fabrication two-layer dielectrics on selected semiconductor materials. For the present, the research has shown that the application of spin-on silica solutions obtained on the basis of silica-organic compounds makes it possible to achieve good electrophysical parameters of dielectric films. The paper describes a technique which consists in combining the method of dielectric film formation with spin-on glass with the method of electrolytic anodisation. This is particularly essential in the case of structures made of III-V semiconductors.

Original language	English
Pages (from-to)	142-144
Number of pages	3
Journal	Electron Technology (Warsaw)
Volume	30
Issue number	2
Publication status	Published - 1997
Event	Proceedings of the 1996 4th Seminar on Surface and Thin Film Structures - Kazimierz Dolny, Pol Duration: 18 Sept 1996 → 21 Sept 1996

ASJC Scopus subject areas

General Engineering

Cite this

@article{504e2ff50f044a33a8e177f4a79b3723,

title = "Evaluation of the usefulness of silica glass for the production of MIS structures with a double dielectric layer",

abstract = "The paper presents the research into a technique of fabrication two-layer dielectrics on selected semiconductor materials. For the present, the research has shown that the application of spin-on silica solutions obtained on the basis of silica-organic compounds makes it possible to achieve good electrophysical parameters of dielectric films. The paper describes a technique which consists in combining the method of dielectric film formation with spin-on glass with the method of electrolytic anodisation. This is particularly essential in the case of structures made of III-V semiconductors.",

author = "S. Los and K. Waczynski",

year = "1997",

language = "English",

volume = "30",

pages = "142--144",

journal = "Electron Technology (Warsaw)",

issn = "0070-9816",

publisher = "Institute of Electron Technology",

number = "2",

note = "Proceedings of the 1996 4th Seminar on Surface and Thin Film Structures ; Conference date: 18-09-1996 Through 21-09-1996",

}

TY - JOUR

T1 - Evaluation of the usefulness of silica glass for the production of MIS structures with a double dielectric layer

AU - Los, S.

AU - Waczynski, K.

PY - 1997

Y1 - 1997

N2 - The paper presents the research into a technique of fabrication two-layer dielectrics on selected semiconductor materials. For the present, the research has shown that the application of spin-on silica solutions obtained on the basis of silica-organic compounds makes it possible to achieve good electrophysical parameters of dielectric films. The paper describes a technique which consists in combining the method of dielectric film formation with spin-on glass with the method of electrolytic anodisation. This is particularly essential in the case of structures made of III-V semiconductors.

AB - The paper presents the research into a technique of fabrication two-layer dielectrics on selected semiconductor materials. For the present, the research has shown that the application of spin-on silica solutions obtained on the basis of silica-organic compounds makes it possible to achieve good electrophysical parameters of dielectric films. The paper describes a technique which consists in combining the method of dielectric film formation with spin-on glass with the method of electrolytic anodisation. This is particularly essential in the case of structures made of III-V semiconductors.

UR - https://www.scopus.com/pages/publications/0031385992

M3 - Conference article

AN - SCOPUS:0031385992

SN - 0070-9816

VL - 30

SP - 142

EP - 144

JO - Electron Technology (Warsaw)

JF - Electron Technology (Warsaw)

IS - 2

T2 - Proceedings of the 1996 4th Seminar on Surface and Thin Film Structures

Y2 - 18 September 1996 through 21 September 1996

ER -

Evaluation of the usefulness of silica glass for the production of MIS structures with a double dielectric layer

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this