Electronic properties of the space charge layer of the clean SnO2(110) surface

J. Szuber; M. Piwowarczyk

doi:10.1016/0042-207X(94)90175-9

Electronic properties of the space charge layer of the clean SnO₂(110) surface

J. Szuber
, M. Piwowarczyk

Department of Cybernetics, Nanotechnology and Data Processing (RAU/RAU10)

Silesian University of Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Photoemission Yield Spectroscopy (PYS) associated with Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED) control have been used in the studies of the electronic properties of the surface space charge layer of the clean SnO₂(110) surface with (1 × 1) atomic structure obtained by ion bombardment with subsequent annealing at 900 K. The work function φ and absolute band bending eVs were 4.20±0.03 and -1.64±0.13 eV, respectively. Moreover, two filled electronic state bands localized in the band gap below the Fermi level E_F were observed. Their origin has also been briefly discussed.

Original language	English
Pages (from-to)	215-217
Number of pages	3
Journal	Vacuum
Volume	45
Issue number	2-3
DOIs	https://doi.org/10.1016/0042-207X(94)90175-9
Publication status	Published - 1994

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

Access to Document

10.1016/0042-207X(94)90175-9

Cite this

@article{425076e31e664fbcaf88f59950a6fcf7,

title = "Electronic properties of the space charge layer of the clean SnO2(110) surface",

abstract = "Photoemission Yield Spectroscopy (PYS) associated with Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED) control have been used in the studies of the electronic properties of the surface space charge layer of the clean SnO2(110) surface with (1 × 1) atomic structure obtained by ion bombardment with subsequent annealing at 900 K. The work function φ and absolute band bending eVs were 4.20±0.03 and -1.64±0.13 eV, respectively. Moreover, two filled electronic state bands localized in the band gap below the Fermi level EF were observed. Their origin has also been briefly discussed.",

author = "J. Szuber and M. Piwowarczyk",

year = "1994",

doi = "10.1016/0042-207X(94)90175-9",

language = "English",

volume = "45",

pages = "215--217",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd.",

number = "2-3",

}

TY - JOUR

T1 - Electronic properties of the space charge layer of the clean SnO2(110) surface

AU - Szuber, J.

AU - Piwowarczyk, M.

PY - 1994

Y1 - 1994

N2 - Photoemission Yield Spectroscopy (PYS) associated with Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED) control have been used in the studies of the electronic properties of the surface space charge layer of the clean SnO2(110) surface with (1 × 1) atomic structure obtained by ion bombardment with subsequent annealing at 900 K. The work function φ and absolute band bending eVs were 4.20±0.03 and -1.64±0.13 eV, respectively. Moreover, two filled electronic state bands localized in the band gap below the Fermi level EF were observed. Their origin has also been briefly discussed.

AB - Photoemission Yield Spectroscopy (PYS) associated with Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED) control have been used in the studies of the electronic properties of the surface space charge layer of the clean SnO2(110) surface with (1 × 1) atomic structure obtained by ion bombardment with subsequent annealing at 900 K. The work function φ and absolute band bending eVs were 4.20±0.03 and -1.64±0.13 eV, respectively. Moreover, two filled electronic state bands localized in the band gap below the Fermi level EF were observed. Their origin has also been briefly discussed.

UR - https://www.scopus.com/pages/publications/0028375468

U2 - 10.1016/0042-207X(94)90175-9

DO - 10.1016/0042-207X(94)90175-9

M3 - Article

AN - SCOPUS:0028375468

SN - 0042-207X

VL - 45

SP - 215

EP - 217

JO - Vacuum

JF - Vacuum

IS - 2-3

ER -