Electronic properties and origin of surface states on GaAs(100) surfaces thermally cleaned in ultrahigh vacuum

J. Szuber

doi:10.1016/0040-6090(83)90328-0

Electronic properties and origin of surface states on GaAs(100) surfaces thermally cleaned in ultrahigh vacuum

J. Szuber

Department of Cybernetics, Nanotechnology and Data Processing (RAU/RAU10)

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Photoemission yield spectroscopy was used to investigate the electronic properties of GaAs(100) surfaces thermally cleaned at 800 K in ultrahigh vacuum (2 × 10^-7 Pa). The work function, ionization energy, surface electron affinity and absolute band bending were determined. The origin of surface state bands in the gap and in the upper part of the valence band is briefly discussed.

Original language	English
Pages (from-to)	33-37
Number of pages	5
Journal	Thin Solid Films
Volume	105
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(83)90328-0
Publication status	Published - 8 Jul 1983

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(83)90328-0

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title = "Electronic properties and origin of surface states on GaAs(100) surfaces thermally cleaned in ultrahigh vacuum",

abstract = "Photoemission yield spectroscopy was used to investigate the electronic properties of GaAs(100) surfaces thermally cleaned at 800 K in ultrahigh vacuum (2 {\texttimes} 10-7 Pa). The work function, ionization energy, surface electron affinity and absolute band bending were determined. The origin of surface state bands in the gap and in the upper part of the valence band is briefly discussed.",

author = "J. Szuber",

year = "1983",

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doi = "10.1016/0040-6090(83)90328-0",

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T1 - Electronic properties and origin of surface states on GaAs(100) surfaces thermally cleaned in ultrahigh vacuum

AU - Szuber, J.

PY - 1983/7/8

Y1 - 1983/7/8

N2 - Photoemission yield spectroscopy was used to investigate the electronic properties of GaAs(100) surfaces thermally cleaned at 800 K in ultrahigh vacuum (2 × 10-7 Pa). The work function, ionization energy, surface electron affinity and absolute band bending were determined. The origin of surface state bands in the gap and in the upper part of the valence band is briefly discussed.

AB - Photoemission yield spectroscopy was used to investigate the electronic properties of GaAs(100) surfaces thermally cleaned at 800 K in ultrahigh vacuum (2 × 10-7 Pa). The work function, ionization energy, surface electron affinity and absolute band bending were determined. The origin of surface state bands in the gap and in the upper part of the valence band is briefly discussed.

UR - https://www.scopus.com/pages/publications/0021097612

U2 - 10.1016/0040-6090(83)90328-0

DO - 10.1016/0040-6090(83)90328-0

M3 - Article

AN - SCOPUS:0021097612

SN - 0040-6090

VL - 105

SP - 33

EP - 37

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Electronic properties and origin of surface states on GaAs(100) surfaces thermally cleaned in ultrahigh vacuum

Abstract

ASJC Scopus subject areas

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