Abstract
The steady state photocarrier grating (SSPG) technique has been used for determining diffusion length of carriers in amorphous hydrogenated silicon (a-Si:H). The novelty of the presented paper is consistent in the taking into account the spatial distribution of radiation intensity over thickness of the investigated thin film. This spatial distribution is evoked by interference of radiation internally reflected in the thin film as well as by the influence of radiation reflectance in the thin film substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 420-424 |
| Number of pages | 5 |
| Journal | Electron Technology (Warsaw) |
| Volume | 31 |
| Issue number | 3-4 |
| Publication status | Published - 1998 |
| Event | Proceedings of the 1997 5th Seminar on Surface and Thin Film Structures - Ustron, Pol Duration: 23 Sept 1997 → 26 Sept 1997 |
ASJC Scopus subject areas
- General Engineering
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