Abstract
A new contactless method of determining the carrier lifetime in semiconductors is presented. It uses the dependence of the magnetic field evoked by photoelectromagnetic current in an illuminated semiconductor placed in an external magnetic field on the frequency of chopping the illumination intensity. This method was used to determine the electron lifetime in p-type crystalline silicon. It is suitable for rapid and simple inspection of a semiconductor wafer for laboratory and industrial purposes. The using of this method in investigations of superlattices and multi-quantum wells is proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 274-277 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 266 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Oct 1995 |
Keywords
- Carrier lifetime
- Photoelectromagnetic effect
- Semiconductors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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