Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum

Boguslawa Adamowicz; Hideki Hasegawa

doi:10.1016/S0042-207X(98)00455-2

Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum

Boguslawa Adamowicz
, Hideki Hasegawa

Division of Applied Physics (RIF/RIF3)

Hokkaido University

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

Rigorous computer analysis of the bipolar surface photovoltage (SPV), including contribution of surface states with U-shaped density distribution and Dember photo-effect, was performed for n-Si and n-GaAs surfaces. The initial surface band bending was varied from accumulation to inversion (in terms of the surface fixed charge Q_FC), and incident photon flux density from 10⁵ to 10²⁶ cm^-2s^-1. The behavior of SPV under weak and strong photo-excitation is discussed for possible use in surface characterization.

Original language	English
Pages (from-to)	173-177
Number of pages	5
Journal	Vacuum
Volume	54
Issue number	1-4
DOIs	https://doi.org/10.1016/S0042-207X(98)00455-2
Publication status	Published - Jul 1999
Event	Proceedings of the 1998 19th International Seminar on Surface Physics - Polanica-Zdroj, Pol Duration: 15 Jun 1998 → 19 Jun 1998

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/S0042-207X(98)00455-2

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title = "Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum",

abstract = "Rigorous computer analysis of the bipolar surface photovoltage (SPV), including contribution of surface states with U-shaped density distribution and Dember photo-effect, was performed for n-Si and n-GaAs surfaces. The initial surface band bending was varied from accumulation to inversion (in terms of the surface fixed charge QFC), and incident photon flux density from 105 to 1026 cm-2s-1. The behavior of SPV under weak and strong photo-excitation is discussed for possible use in surface characterization.",

author = "Boguslawa Adamowicz and Hideki Hasegawa",

year = "1999",

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doi = "10.1016/S0042-207X(98)00455-2",

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volume = "54",

pages = "173--177",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd.",

number = "1-4",

note = "Proceedings of the 1998 19th International Seminar on Surface Physics ; Conference date: 15-06-1998 Through 19-06-1998",

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TY - JOUR

T1 - Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum

AU - Adamowicz, Boguslawa

AU - Hasegawa, Hideki

PY - 1999/7

Y1 - 1999/7

N2 - Rigorous computer analysis of the bipolar surface photovoltage (SPV), including contribution of surface states with U-shaped density distribution and Dember photo-effect, was performed for n-Si and n-GaAs surfaces. The initial surface band bending was varied from accumulation to inversion (in terms of the surface fixed charge QFC), and incident photon flux density from 105 to 1026 cm-2s-1. The behavior of SPV under weak and strong photo-excitation is discussed for possible use in surface characterization.

AB - Rigorous computer analysis of the bipolar surface photovoltage (SPV), including contribution of surface states with U-shaped density distribution and Dember photo-effect, was performed for n-Si and n-GaAs surfaces. The initial surface band bending was varied from accumulation to inversion (in terms of the surface fixed charge QFC), and incident photon flux density from 105 to 1026 cm-2s-1. The behavior of SPV under weak and strong photo-excitation is discussed for possible use in surface characterization.

UR - https://www.scopus.com/pages/publications/0033154329

U2 - 10.1016/S0042-207X(98)00455-2

DO - 10.1016/S0042-207X(98)00455-2

M3 - Conference article

AN - SCOPUS:0033154329

SN - 0042-207X

VL - 54

SP - 173

EP - 177

JO - Vacuum

JF - Vacuum

IS - 1-4

T2 - Proceedings of the 1998 19th International Seminar on Surface Physics

Y2 - 15 June 1998 through 19 June 1998

ER -

Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum

Abstract

ASJC Scopus subject areas

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