Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum

M. Miczek; B. Adamowicz; J. Szuber; H. Hasegawa

doi:10.1016/S0042-207X(01)00195-6

Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum

M. Miczek
, B. Adamowicz
, J. Szuber
, H. Hasegawa

Silesian University of Technology
Hokkaido University

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

Rigorous computer simulations of the dependence of the band-to-band photoluminescence quantum efficiency (Y_PL) were performed for n-type InP surfaces in a wide range of excitation light intensity, Φ (from 10¹⁸ to 10²⁵ cm^-2 s^-1). A strong influence of the density of surface states (N_SS) and their capture cross sections for electrons (σ_n) and holes (σ_p) on Y_PL-Φ dependencies was found. We reproduced very well the experimental dependence Y_PL-Φ, taken from the literature, for the chemically polished InP (1 0 0) surface, which exhibited strong increase of Y_PL. From the fitting of the experimental data we determined the surface state parameters, including the minimum density of U-shaped continuum (N_SS0 = 10¹¹ eV^-1 cm^-2), and capture cross sections (σ_n = 10^-14 cm² and σ_p = 10^-13 cm²). The best fitting was carried out using a fully-computer procedure based on a novel Simple-Genetic-Algorithm (SGA) concept. In addition, the behaviour of the effective surface recombination velocity (S_eff), and quasi-Fermi levels for electrons (E_Fn) and holes (E_Fp) was discussed.

Original language	English
Pages (from-to)	223-227
Number of pages	5
Journal	Vacuum
Volume	63
Issue number	1-2
DOIs	https://doi.org/10.1016/S0042-207X(01)00195-6
Publication status	Published - 2 Jul 2001
Event	20th International Seminar on Surface Physics - Kudowa-Zdroj, Poland Duration: 19 Jun 2000 → 24 Jun 2000

Keywords

Capture cross sections
DIGS model
Genetic algorithms
InP surface
Photoluminescence
Surface recombination velocity
Surface states

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/S0042-207X(01)00195-6

Cite this

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title = "Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum",

abstract = "Rigorous computer simulations of the dependence of the band-to-band photoluminescence quantum efficiency (YPL) were performed for n-type InP surfaces in a wide range of excitation light intensity, Φ (from 1018 to 1025 cm-2 s-1). A strong influence of the density of surface states (NSS) and their capture cross sections for electrons (σn) and holes (σp) on YPL-Φ dependencies was found. We reproduced very well the experimental dependence YPL-Φ, taken from the literature, for the chemically polished InP (1 0 0) surface, which exhibited strong increase of YPL. From the fitting of the experimental data we determined the surface state parameters, including the minimum density of U-shaped continuum (NSS0 = 1011 eV-1 cm-2), and capture cross sections (σn = 10-14 cm2 and σp = 10-13 cm2). The best fitting was carried out using a fully-computer procedure based on a novel Simple-Genetic-Algorithm (SGA) concept. In addition, the behaviour of the effective surface recombination velocity (Seff), and quasi-Fermi levels for electrons (EFn) and holes (EFp) was discussed.",

keywords = "Capture cross sections, DIGS model, Genetic algorithms, InP surface, Photoluminescence, Surface recombination velocity, Surface states",

author = "M. Miczek and B. Adamowicz and J. Szuber and H. Hasegawa",

year = "2001",

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T1 - Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum

AU - Miczek, M.

AU - Adamowicz, B.

AU - Szuber, J.

AU - Hasegawa, H.

PY - 2001/7/2

Y1 - 2001/7/2

N2 - Rigorous computer simulations of the dependence of the band-to-band photoluminescence quantum efficiency (YPL) were performed for n-type InP surfaces in a wide range of excitation light intensity, Φ (from 1018 to 1025 cm-2 s-1). A strong influence of the density of surface states (NSS) and their capture cross sections for electrons (σn) and holes (σp) on YPL-Φ dependencies was found. We reproduced very well the experimental dependence YPL-Φ, taken from the literature, for the chemically polished InP (1 0 0) surface, which exhibited strong increase of YPL. From the fitting of the experimental data we determined the surface state parameters, including the minimum density of U-shaped continuum (NSS0 = 1011 eV-1 cm-2), and capture cross sections (σn = 10-14 cm2 and σp = 10-13 cm2). The best fitting was carried out using a fully-computer procedure based on a novel Simple-Genetic-Algorithm (SGA) concept. In addition, the behaviour of the effective surface recombination velocity (Seff), and quasi-Fermi levels for electrons (EFn) and holes (EFp) was discussed.

AB - Rigorous computer simulations of the dependence of the band-to-band photoluminescence quantum efficiency (YPL) were performed for n-type InP surfaces in a wide range of excitation light intensity, Φ (from 1018 to 1025 cm-2 s-1). A strong influence of the density of surface states (NSS) and their capture cross sections for electrons (σn) and holes (σp) on YPL-Φ dependencies was found. We reproduced very well the experimental dependence YPL-Φ, taken from the literature, for the chemically polished InP (1 0 0) surface, which exhibited strong increase of YPL. From the fitting of the experimental data we determined the surface state parameters, including the minimum density of U-shaped continuum (NSS0 = 1011 eV-1 cm-2), and capture cross sections (σn = 10-14 cm2 and σp = 10-13 cm2). The best fitting was carried out using a fully-computer procedure based on a novel Simple-Genetic-Algorithm (SGA) concept. In addition, the behaviour of the effective surface recombination velocity (Seff), and quasi-Fermi levels for electrons (EFn) and holes (EFp) was discussed.

KW - Capture cross sections

KW - DIGS model

KW - Genetic algorithms

KW - InP surface

KW - Photoluminescence

KW - Surface recombination velocity

KW - Surface states

UR - https://www.scopus.com/pages/publications/0035796934

U2 - 10.1016/S0042-207X(01)00195-6

DO - 10.1016/S0042-207X(01)00195-6

M3 - Conference article

AN - SCOPUS:0035796934

SN - 0042-207X

VL - 63

SP - 223

EP - 227

JO - Vacuum

JF - Vacuum

IS - 1-2

T2 - 20th International Seminar on Surface Physics

Y2 - 19 June 2000 through 24 June 2000

ER -

Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum

Abstract

Keywords

ASJC Scopus subject areas

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