Abstract
The knowledge of the optical and geometrical parameters of thin films is important for optics and optoelectronics. The comparison of spectral dependences of real part of refractive index and absorption coefficient of radiation in a-Si:H as well as thin film thickness and its standard deviation obtained from spectral dependences of optical transmittance T(λ) and/or R(λ) is presented. Taking into account the Gaussian distribution of the change in phase Γ of radiation traversing a thin film on the spectral characteristic 7(λ) and R(λ) is the novelty of the used method of investigations. The consequences of linear and Gaussian distributions of Γ for R(λ) are shown the first time. It is shown that the values of optical parameters obtained from T(λ) and R(λ) simultaneously are more reliable, although the simpler investigations of T(hv) or R(hv) separately can give results comparable with them
| Original language | English |
|---|---|
| Pages (from-to) | 105-110 |
| Number of pages | 6 |
| Journal | NDT and E International |
| Volume | 31 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Apr 1998 |
Keywords
- Interference spectroscopy
- Optical properties
- Thin films
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering
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