Chemical routes to magnetic nonvolatile memory devices

Andrea Ehrmann; Tomasz Blachowicz

doi:10.1016/B978-0-12-819718-9.00010-8

Chemical routes to magnetic nonvolatile memory devices

Andrea Ehrmann
, Tomasz Blachowicz

Division of Geochronology and Environmental Isotopes (RIF/RIF2)

Bielefeld University of Applied Sciences

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

2 Citations (Scopus)

Abstract

Magnetoresistive (or magnetic) random-access memories (MRAMs) belong to the nonvolatile memory devices, using magnetism to store information for long time periods. MRAMs are faster than mechanical hard disk drives and unlike solid-state drives (SSDs), can store data even without regular energy supply. A few other ideas, such as ferroelectric and phase-change materials, are also expected to show similar properties but are scarcely investigated.

Original language	English
Title of host publication	Chemical Solution Synthesis for Materials Design and Thin Film Device Applications
Publisher	Elsevier
Pages	665-677
Number of pages	13
ISBN (Electronic)	9780128197189
DOIs	https://doi.org/10.1016/B978-0-12-819718-9.00010-8
Publication status	Published - 1 Jan 2021

Keywords

Chemical deposition
Chemical etching
Dry etching
Giant magnetoresistance
MRAM
Magnetic memory
Nonvolatile
Tunnel magnetoresistance

ASJC Scopus subject areas

General Engineering
General Materials Science

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10.1016/B978-0-12-819718-9.00010-8

Cite this

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abstract = "Magnetoresistive (or magnetic) random-access memories (MRAMs) belong to the nonvolatile memory devices, using magnetism to store information for long time periods. MRAMs are faster than mechanical hard disk drives and unlike solid-state drives (SSDs), can store data even without regular energy supply. A few other ideas, such as ferroelectric and phase-change materials, are also expected to show similar properties but are scarcely investigated.",

keywords = "Chemical deposition, Chemical etching, Dry etching, Giant magnetoresistance, MRAM, Magnetic memory, Nonvolatile, Tunnel magnetoresistance",

author = "Andrea Ehrmann and Tomasz Blachowicz",

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AU - Ehrmann, Andrea

AU - Blachowicz, Tomasz

PY - 2021/1/1

Y1 - 2021/1/1

N2 - Magnetoresistive (or magnetic) random-access memories (MRAMs) belong to the nonvolatile memory devices, using magnetism to store information for long time periods. MRAMs are faster than mechanical hard disk drives and unlike solid-state drives (SSDs), can store data even without regular energy supply. A few other ideas, such as ferroelectric and phase-change materials, are also expected to show similar properties but are scarcely investigated.

AB - Magnetoresistive (or magnetic) random-access memories (MRAMs) belong to the nonvolatile memory devices, using magnetism to store information for long time periods. MRAMs are faster than mechanical hard disk drives and unlike solid-state drives (SSDs), can store data even without regular energy supply. A few other ideas, such as ferroelectric and phase-change materials, are also expected to show similar properties but are scarcely investigated.

KW - Chemical deposition

KW - Chemical etching

KW - Dry etching

KW - Giant magnetoresistance

KW - MRAM

KW - Magnetic memory

KW - Nonvolatile

KW - Tunnel magnetoresistance

UR - https://www.scopus.com/pages/publications/85126829025

U2 - 10.1016/B978-0-12-819718-9.00010-8

DO - 10.1016/B978-0-12-819718-9.00010-8

M3 - Chapter

AN - SCOPUS:85126829025

SP - 665

EP - 677

BT - Chemical Solution Synthesis for Materials Design and Thin Film Device Applications

PB - Elsevier

ER -

Chemical routes to magnetic nonvolatile memory devices

Abstract

Keywords

ASJC Scopus subject areas

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